Micron and Intel announce update to 3D XPoint joint development program


Micron and Intel have announced an update to their 3D XPoint joint development partnership. According to the duo, this has resulted in the development of an entirely new class of non-volatile memory with lower latency and greater endurance than NAND memory.

The companies say they have agreed to complete joint development for the second generation of 3D XPoint technology, which is expected to occur in the first half of 2019.

Technology development beyond the second generation of 3D XPoint technology will be pursued independently by the two companies in order to optimise the technology for their respective product and business needs.

The two companies will continue to manufacture memory based on 3D XPoint technology at the Intel-Micron Flash Technologies (IMFT) facility in Lehi, Utah.

Rob Crooke, senior vice president and general manager of Non-Volatile Memory Solutions Group at Intel Corporation, commented: “Intel Optane’s direct connection to the world’s most advanced computing platforms is achieving breakthrough results in IT and consumer applications. We intend to build on this momentum and extend our leadership with Optane, which combined with our high-density 3D NAND technology offers the best solutions for today’s computing and storage needs.”

Bethan Grylls

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